Nexperia Introduces Silicon Carbide MOSFETs for EV Charging Applications
Nexperia Unveils Industry-Leading 1200V SiC MOSFETs in D2PAK-7 SMD Package
BonChip Electronics, a valued distributor of Nexperia products, is excited to announce the availability of Nexperia's groundbreaking 1200V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging. This innovative offering expands Nexperia's rapidly growing SiC MOSFET portfolio, providing designers with exceptional performance and flexibility for a wide range of industrial applications.
Addressing Market Demand for High-Performance SiC Solutions
The launch of the NSF0xx120D7A0 series directly addresses the increasing demand for high-performance SiC switches in compact and versatile SMD packages. The D2PAK-7 package is becoming increasingly popular in various industrial applications, including:
- Electric Vehicle (EV) Charging: Ideal for both on-board and off-board EV charging infrastructure, including charging piles and uninterruptible power supplies (UPS).
- Solar and Energy Storage Systems (ESS): Well-suited for inverters used in solar power generation and energy storage systems.
This release further solidifies the successful strategic partnership between Nexperia and Mitsubishi Electric Corporation (MELCO). Their collaboration focuses on pushing the boundaries of energy efficiency and electrical performance in SiC wide bandgap semiconductors. Additionally, the partnership ensures the future-proofing of production capacity to meet the ever-growing demand for this transformative technology.
Unmatched Temperature Stability and Industry-Leading Performance
Nexperia's innovative approach goes beyond simply offering a variety of SiC MOSFET options. They understand that real-world performance is crucial:
- Industry-Leading Temperature Stability: Nexperia tackles a significant challenge in SiC MOSFETs – increasing RDSon at elevated temperatures. Many manufacturers only specify the nominal RDSon value, which can rise by over 100% under operating conditions. Nexperia's new SiC MOSFETs boast exceptional temperature stability, with the nominal RDSon increasing by only 38% from 25 °C to 175 °C, minimizing conduction losses and maximizing efficiency.
Additional Performance Advantages
Nexperia's 1200V SiC MOSFETs in D2PAK-7 SMD packaging deliver additional benefits for designers:
- Tight Threshold Voltage (VGS(th)) Specification: Ensures balanced current-carrying capability when devices are connected in parallel, simplifying system design.
- Low Body Diode Forward Voltage (VSD): Enhances device robustness and efficiency, while also reducing dead-time requirements during freewheeling operation.
BonChip Electronics: Your Partner for Nexperia SiC Solutions
As a leading distributor of Nexperia products, BonChip Electronics offers the complete line of Nexperia SiC MOSFETs, including the new 1200V D2PAK-7 series. Our team of experts can assist you in selecting the optimal SiC MOSFET solution for your specific application needs. We offer:
- Unparalleled product knowledge: Our team possesses in-depth knowledge of Nexperia's SiC MOSFET portfolio and can guide you through the selection process, ensuring compatibility and optimal performance.
- Streamlined ordering process: We offer a user-friendly online platform for easy ordering and fast delivery.
- Technical support: Our team is readily available to answer any technical questions you may have regarding Nexperia SiC MOSFETs or any other Nexperia product.
Contact BonChip Electronics today to explore how Nexperia's 1200V SiC MOSFETs in D2PAK-7 SMD packaging can elevate the efficiency and performance of your next industrial application.
