Vishay Unveils 1200 V Silicon Carbide Schottky Diodes for High-Efficiency Power Switching Applications
Vishay Intertechnology Unveils Next-Generation 1200V Silicon Carbide (SiC) Schottky Diodes for Enhanced Efficiency and Reliability
BonChip Electronics, a trusted distributor of Vishay Intertechnology's innovative power electronics solutions, is excited to announce the availability of the groundbreaking Gen 3 1200V SiC Schottky diodes. These advanced devices empower engineers to create highly efficient and reliable switching power designs for demanding applications.
Optimizing Efficiency and Reliability with Merged PIN Schottky (MPS) Design
Vishay's latest SiC Schottky diodes feature a revolutionary MPS design, delivering a compelling combination of benefits:
- High Surge Current Robustness: The devices excel in handling high surge currents, ensuring system resilience in demanding operating conditions.
- Reduced Forward Voltage Drop: The MPS structure, incorporating backside thinning via laser annealing technology, achieves a significantly lower forward voltage drop of 1.35V, minimizing power losses and enhancing efficiency.
- Low Capacitive Charge: With a minimal capacitive charge down to 28 nC, the diodes enable faster switching speeds and contribute to overall system efficiency.
- Reduced Conduction Losses: The devices boast a remarkably low typical reverse leakage current of 2.5 µA at 25°C, minimizing conduction losses during light loads and idling periods.
- Virtually No Recovery Tail: Unlike ultrafast diodes, the Gen 3 devices exhibit virtually no recovery tail, further optimizing efficiency by reducing switching losses.
Broad Range of Package Options and Superior Thermal Performance
The Gen 3 SiC Schottky diodes cater to diverse design needs with a variety of package options:
- TO-220AC 2L, TO-247AD 2L, and TO-247AD 3L Through-Hole Packages: These industry-standard through-hole packages offer familiarity and ease of implementation for traditional PCB designs.
- D2PAK 2L (TO-263AB 2L) Surface-Mount Package: The D2PAK 2L package caters to space-constrained applications where surface-mount technology is preferred.
Ideal for Demanding Applications with Harsh Environments
The Gen 3 SiC Schottky diodes are designed to excel in challenging environments:
- High Operating Temperatures: The devices boast a maximum operating temperature of +175°C, ensuring reliable operation in demanding thermal conditions.
- Robust Forward Surge Ratings: With forward surge ratings of up to 260A, the diodes can withstand high transient currents, safeguarding system integrity.
- Excellent Electrical Insulation: For the D2PAK 2L package, a high CTI ≥ 600 molding compound guarantees exceptional electrical insulation at elevated voltages.
High Reliability for Long-Term Performance
The Gen 3 SiC Schottky diodes prioritize long-lasting reliability:
- RoHS Compliance and Halogen-Free Construction: Meeting stringent environmental regulations, the devices are RoHS-compliant and halogen-free.
- Rigorous Testing: The diodes have successfully undergone extensive testing, including 2000 hours of high-temperature reverse bias (HTRB) and 2000 thermal cycles, ensuring exceptional reliability.
Typical Applications
The Gen 3 SiC Schottky diodes are well-suited for a wide range of applications requiring high efficiency and reliability:
- AC/DC Power Factor Correction (PFC): Optimizing efficiency in AC-to-DC power conversion.
- DC/DC Ultra High-Frequency Output Rectification: Enabling efficient rectification in high-frequency DC/DC converters.
- Solar Power Inverters (FBPS and LLC Converters): Contributing to the efficiency and reliability of solar power conversion systems.
- Energy Storage Systems: Ensuring efficient power management in energy storage applications.
- Industrial Drives and Tools: Providing robust and efficient power conversion for industrial equipment.
- Data Centers: Optimizing power delivery within data center infrastructure.
Contact BonChip Electronics today to learn more about the Gen 3 1200V SiC Schottky diodes and explore how they can elevate your next switching power design.
